The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Oct. 20, 2006
Applicants:
Chi-chun Chen, Kaohsiung, TW;
Matt Yeh, Hsinchu, TW;
Shih-chang Chen, Hsin-Chu, TW;
Mong-song Liang, Hsin-Chu, TW;
Jennifer Chen, Hsinchu, TW;
Da-yuan Lee, Kaohsiung, TW;
Inventors:
Chi-Chun Chen, Kaohsiung, TW;
Matt Yeh, Hsinchu, TW;
Shih-Chang Chen, Hsin-Chu, TW;
Mong-Song Liang, Hsin-Chu, TW;
Jennifer Chen, Hsinchu, TW;
Da-Yuan Lee, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a gate dielectric layer includes forming a gate dielectric layer over a substrate. The gate dielectric layer is processed with carbon-containing ions. The gate dielectric layer is thermally processed, thereby providing the gate dielectric layer with a level of carbon between about 1 atomic % and about 20 atomic %.