The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Aug. 15, 2008
Yun-ren Wang, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Shu-yen Chan, Hsinchu County, TW;
Kuo-tai Huang, Hsinchu, TW;
Yun-Ren Wang, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
Shu-Yen Chan, Hsinchu County, TW;
Kuo-Tai Huang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.