The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Oct. 26, 2006
LI Wang, Jiang Xi, CN;
Fengyi Jiang, Jiang Xi, CN;
Maoxing Zhou, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Li Wang, Jiang Xi, CN;
Fengyi Jiang, Jiang Xi, CN;
Maoxing Zhou, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Lattice Power (Jiangxi) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile