The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Feb. 03, 2006
Takuya Futatsuyama, Yokohama, JP;
Toshiya Kotani, Machida, JP;
Hiromitsu Mashita, Sagamihara, JP;
Atsushi Maesono, Yokohama, JP;
Ayako Nakano, Yokohama, JP;
Tadahito Fujisawa, Yokkaichi, JP;
Takuya Futatsuyama, Yokohama, JP;
Toshiya Kotani, Machida, JP;
Hiromitsu Mashita, Sagamihara, JP;
Atsushi Maesono, Yokohama, JP;
Ayako Nakano, Yokohama, JP;
Tadahito Fujisawa, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to this invention, the NAND type flash memory of high reliability is realized. It provides a semiconductor memory device comprising: a plurality of memory cells; a plurality of word lines formed by a first gate wiring layer; a plurality of first transistors for providing voltages to said word lines; and electrical connections for connection said word lines and sources or drains of said first transistors, said electrical connections being formed of both first wirings of a first wiring layer formed above said first gate wiring layer and second wirings of a second wiring layers formed above said first wiring layer.