The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Jul. 15, 2008
Applicants:

An L. Steegen, Stamford, CT (US);

Haining S. Yang, Wappingers Falls, NY (US);

Ying Zhang, Yorktown Heights, NY (US);

Inventors:

An L. Steegen, Stamford, CT (US);

Haining S. Yang, Wappingers Falls, NY (US);

Ying Zhang, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.


Find Patent Forward Citations

Steegen, An. (2010). Method and structure for forming strained si for cmos devices (U.S. Patent No. 7700951). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7700951

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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