The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Aug. 22, 2003
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Gonzalo Antonio Monroy, San Francisco, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Gonzalo Antonio Monroy, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.