The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Nov. 09, 2006
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Jan Hoentschel, Dresden, DE;
Manfred Horstmann, Duerrrhoehrsdorf-Ditterbach, DE;
Peter Javorka, Dresden, DE;
Joe Bloomquist, Dresden, DE;
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Jan Hoentschel, Dresden, DE;
Manfred Horstmann, Duerrrhoehrsdorf-Ditterbach, DE;
Peter Javorka, Dresden, DE;
Joe Bloomquist, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By recessing drain and source regions, a highly stressed layer, such as a contact etch stop layer, may be formed in the recess in order to enhance the strain generation in the adjacent channel region of a field effect transistor. Moreover, a strained semiconductor material may be positioned in close proximity to the channel region by reducing or avoiding undue relaxation effects of metal silicides, thereby also providing enhanced efficiency for the strain generation. In some aspects, both effects may be combined to obtain an even more efficient strain-inducing mechanism.