The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

Dec. 16, 2005
Applicants:

Rajinder Dhindsa, San Jose, CA (US);

Felix Kozakevich, Sunnyvale, CA (US);

Lumin LI, Santa Clara, CA (US);

Dave Trussell, Fremont, CA (US);

Inventors:

Rajinder Dhindsa, San Jose, CA (US);

Felix Kozakevich, Sunnyvale, CA (US);

Lumin Li, Santa Clara, CA (US);

Dave Trussell, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 10/00 (2006.01); C23C 16/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.


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