The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

Dec. 28, 2006
Applicants:

Madhavi R. Chandrachood, Sunnyvale, CA (US);

Nicole Sandlin, Sunnyvale, CA (US);

Yung-hee Yvette Lee, San Jose, CA (US);

Jian Ding, San Jose, CA (US);

Inventors:

Madhavi R. Chandrachood, Sunnyvale, CA (US);

Nicole Sandlin, Sunnyvale, CA (US);

Yung-Hee Yvette Lee, San Jose, CA (US);

Jian Ding, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.


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