The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2010

Filed:

Jan. 29, 2007
Applicants:

Qiaolin Zhang, Union City, CA (US);

Paul Vanadrichem, Cupertino, CA (US);

Laurent Depre, Revel, FR;

Qiliang Yan, Portland, OR (US);

Inventors:

Qiaolin Zhang, Union City, CA (US);

Paul VanAdrichem, Cupertino, CA (US);

Laurent Depre, Revel, FR;

Qiliang Yan, Portland, OR (US);

Assignee:

Synopsys, Inc., Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention provides a system that accurately predicts an apodization effect in an optical lithography system for manufacturing an integrated circuit. During operation, the system starts by collecting an apodization-effect-induced spatial transmission profile from the optical lithography system. The system then constructs an apodization model based on the spatial transmission profile. Next, the system enhances a lithography model for the optical lithography system by incorporating the apodization model into the lithography model, wherein the enhanced lithography model accurately predicts the effects of apodization on the optical lithography system.


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