The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Aug. 01, 2007
Elbert Huang, Carmel, NY (US);
William F. Landers, Wappingers Falls, NY (US);
Michael Lane, Cortlandt Manor, NY (US);
Eric G. Liniger, Sandy Hook, CT (US);
Xiao H. Liu, Briarcliff Manor, NY (US);
David L. Questad, Hopewell Junction, NY (US);
Thomas M. Shaw, Peekskill, NY (US);
Elbert Huang, Carmel, NY (US);
William F. Landers, Wappingers Falls, NY (US);
Michael Lane, Cortlandt Manor, NY (US);
Eric G. Liniger, Sandy Hook, CT (US);
Xiao H. Liu, Briarcliff Manor, NY (US);
David L. Questad, Hopewell Junction, NY (US);
Thomas M. Shaw, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method of strengthening a structure, to heal the imperfection of the structure, to reinforce the structure, and thus strengthening the dielectric without compromising the desirable low dielectric constant of the structure. The inventive method includes the steps of providing a semiconductor structure having at least one interconnect structure; dicing the interconnect structure; applying at least one infiltrant into the interconnect structure; and infiltrating the infiltrant to infiltrate into the interconnect structure.