The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Nov. 22, 2006
Juei-nai Kwo, Hsinchu, TW;
Ming-hwei Hong, Hsinchu, TW;
Wei Chin Lee, Taipei, TW;
Hsiang Pi Chang, Yonghe, TW;
Yan Dar Wu, Taipei, TW;
Kun Yu Lee, Tainan, TW;
Yi Jiun Lee, Lunbei Township, Yunlin County, TW;
Juei-Nai Kwo, Hsinchu, TW;
Ming-Hwei Hong, Hsinchu, TW;
Wei Chin Lee, Taipei, TW;
Hsiang Pi Chang, Yonghe, TW;
Yan Dar Wu, Taipei, TW;
Kun Yu Lee, Tainan, TW;
Yi Jiun Lee, Lunbei Township, Yunlin County, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1×10Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.