Company Filing History:
Years Active: 2010
Title: Innovative Contributions of Hsiang Pi Chang in MOS Transistor Technology
Introduction: Hsiang Pi Chang, an accomplished inventor based in Yonghe, Taiwan, has made significant strides in the field of semiconductor technology. With a focus on enhancing the formation of substrates for MOS (metal oxide semiconductor) transistor components, his work exemplifies the spirit of innovation in modern electronics.
Latest Patents: Hsiang Pi Chang holds a patent entitled "Method for forming substrates for MOS transistor components and its products." This pioneering invention outlines a method to create substrates in a controlled environment with a pressure below 1×10⁻⁷ Torr. His technique involves providing a solid-state metal oxide source, such as hafnium oxide or aluminum oxide, and vaporizing it to form a molecular beam. This process facilitates the deposition of an amorphous first metal oxide film, crucial for the fabrication of effective MOS transistors.
Career Highlights: Hsiang Pi Chang is affiliated with National Tsing Hua University, where he has dedicated his research efforts to advancing semiconductor technologies. His contributions significantly impact the efficiency and performance of MOS transistors, which are foundational to modern electronic devices.
Collaborations: Throughout his career, Hsiang Pi Chang has had the privilege of collaborating with notable researchers in the field. Among his coworkers are Juei-Nai Kwo and Ming-Hwei Hong, who share his commitment to innovation and research excellence.
Conclusion: Hsiang Pi Chang's contributions to the field of MOS transistor technology through his innovative patent showcase the potential for advancements in semiconductor manufacturing. His work at National Tsing Hua University not only enhances electronic performance but also inspires future innovations in the industry.