Company Filing History:
Years Active: 2010
Title: Yi Jiun Lee: Innovator in MOS Transistor Technology
Introduction
Yi Jiun Lee is a prominent inventor based in Lunbei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming substrates for MOS (metal oxide semiconductor) transistors. His innovative approach has the potential to enhance the performance and efficiency of electronic devices.
Latest Patents
Yi Jiun Lee holds a patent titled "Method for forming substrates for MOS transistor components and its products." This invention outlines a method that involves creating substrates in a reduced-pressure environment, utilizing a solid-state metal oxide source. The process includes vaporizing the metal oxide source to form a molecular beam, which is then deposited on a base to fabricate a substrate for MOS transistors. This patent showcases his expertise and commitment to advancing semiconductor technology. He has 1 patent to his name.
Career Highlights
Yi Jiun Lee is affiliated with Tsinghua University, where he continues to engage in research and development in the field of semiconductor technology. His work has garnered attention for its innovative approach and practical applications in the electronics industry.
Collaborations
Yi Jiun Lee has collaborated with notable colleagues, including Juei-Nai Kwo and Ming-Hwei Hong. These partnerships have contributed to the advancement of research in semiconductor technologies and have fostered a collaborative environment for innovation.
Conclusion
Yi Jiun Lee is a distinguished inventor whose work in MOS transistor technology is paving the way for future advancements in the electronics sector. His contributions are vital to the ongoing evolution of semiconductor applications.