Company Filing History:
Years Active: 2010
Title: Kun Yu Lee: Innovator in MOS Transistor Technology
Introduction
Kun Yu Lee is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming substrates for MOS (metal oxide semiconductor) transistors. His innovative approach has the potential to enhance the performance and efficiency of electronic devices.
Latest Patents
Kun Yu Lee holds a patent titled "Method for forming substrates for MOS transistor components and its products." This invention provides a method for forming substrates for MOS transistors, which includes steps such as creating a reduced-pressure environment and vaporizing solid-state metal oxide sources. The patent outlines a process that aims to achieve an amorphous state of a first metal oxide film, which is crucial for the fabrication of MOS transistor substrates. He has 1 patent to his name.
Career Highlights
Kun Yu Lee is affiliated with Tsinghua University, where he continues to engage in research and development in semiconductor technology. His work has garnered attention for its innovative methodologies and practical applications in the electronics industry.
Collaborations
Kun Yu Lee has collaborated with notable colleagues, including Juei-Nai Kwo and Ming-Hwei Hong. These partnerships have contributed to the advancement of research in the field of MOS transistors.
Conclusion
Kun Yu Lee's contributions to the field of semiconductor technology, particularly through his patent on MOS transistor substrates, highlight his role as an innovator. His work at Tsinghua University and collaborations with esteemed colleagues further emphasize his impact on the industry.