The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Dec. 07, 2005
Gek Soon Chua, Singapore, SG;
Sia Kim Tan, Singapore, SG;
Qunying Lin, Singapore, SG;
Cho Jui Tay, Singapore, SG;
Chenggen Quan, Singapore, SG;
Gek Soon Chua, Singapore, SG;
Sia Kim Tan, Singapore, SG;
Qunying Lin, Singapore, SG;
Cho Jui Tay, Singapore, SG;
Chenggen Quan, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
A method for forming a phase shift mask is presented. The method includes providing a substrate including a transparent material having first, second and third regions, the third region being disposed between the first and second regions. The method also includes forming a light reducing layer on a first major surface of the substrate. The light reducing layer is patterned to form a patterned light reducing layer having sidewalls defining openings to expose the first and second regions. The patterned light reducing layer is processed to transform the sidewalls of the patterned light reducing layer to angled sidewalls having an angle of less than 90° from a plane of the first major surface of the substrate. The angled sidewalls improve intensity balance of an image-formed by light-transmitted through the mask.