The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Mar. 06, 2006
Jinmiao James Shen, Austin, TX (US);
Jonathan L. Cobb, Austin, TX (US);
William D. Darlington, Austin, TX (US);
Brian J. Fisher, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Vikas R. Sheth, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
James E. Vasek, Austin, TX (US);
Jinmiao James Shen, Austin, TX (US);
Jonathan L. Cobb, Austin, TX (US);
William D. Darlington, Austin, TX (US);
Brian J. Fisher, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Vikas R. Sheth, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
James E. Vasek, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for reducing line edge roughness (LER) in a layer of photoresist is provided. In accordance with the method, a layer of photoresist is applied to a substrate. The layer of photoresist is then patterned and annealed in an atmosphere comprising at least one gas selected from the group consisting of hydrogen, nitrogen and fluorine-containing materials. Preferably, the anneal is performed after patterning the photoresist, but either immediately after, or subsequent to, the trim.