The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Sep. 26, 2003
Naoto Nakamura, Toyama, JP;
Iwao Nakamura, Toyama, JP;
Tomoharu Shimada, Nagasaki, JP;
Kenichi Ishiguro, Toyama, JP;
Sadao Nakashima, Toyama, JP;
Naoto Nakamura, Toyama, JP;
Iwao Nakamura, Toyama, JP;
Tomoharu Shimada, Nagasaki, JP;
Kenichi Ishiguro, Toyama, JP;
Sadao Nakashima, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate supportis formed from a main body portionand a supporting portion. In the main body portion, a plurality of placing portionsextend parallel, and supporting portionsare provided on the placing portions. A substrateis placed on the supporting portion. The supporting portionhas a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portionis made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion