The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Oct. 23, 2004
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Amir Al-bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.