The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Dec. 18, 2007
Te-sheng Chao, Taichung County, TW;
Ming-jung Chen, Taipei County, TW;
Philip H. Yeh, Santa Monica, CA (US);
Ming-jinn Tsai, Hsinchu, TW;
Te-Sheng Chao, Taichung County, TW;
Ming-Jung Chen, Taipei County, TW;
Philip H. Yeh, Santa Monica, CA (US);
Ming-Jinn Tsai, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Nany Technology Corporation., Taoyuan, TW;
Promos Technologies Inc., Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.