The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Mar. 27, 2002
Osamu Nasu, Hitachinaka, JP;
Tadashi Otaka, Hitachinaka, JP;
Hiroki Kawada, Tsuchiura, JP;
Ritsuo Fukaya, Hitachinaka, JP;
Makoto Ezumi, Mito, JP;
Osamu Nasu, Hitachinaka, JP;
Tadashi Otaka, Hitachinaka, JP;
Hiroki Kawada, Tsuchiura, JP;
Ritsuo Fukaya, Hitachinaka, JP;
Makoto Ezumi, Mito, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.