The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Jun. 20, 2008
Ying Zhang, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
Thomas Safron Kanarsky, Hopewell Junction, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Jakub Tadeusz Kedzierski, Peekskill, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
Thomas Safron Kanarsky, Hopewell Junction, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Jakub Tadeusz Kedzierski, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors.