The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Aug. 15, 2006
Zhaohui Cheng, Tokyo, JP;
Hiroshi Makino, Kokubunji, JP;
Hikaru Koyama, Kodaira, JP;
Mitsugu Sato, Hitachinaka, JP;
Zhaohui Cheng, Tokyo, JP;
Hiroshi Makino, Kokubunji, JP;
Hikaru Koyama, Kodaira, JP;
Mitsugu Sato, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.