The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Oct. 19, 2006
Yasuyoshi Hyodo, Tokyo, JP;
Nobuo Matsuki, Tokyo, JP;
Masashi Yamaguchi, Tokyo, JP;
Atsuki Fukazawa, Tokyo, JP;
Naoki Ohara, Tokyo, JP;
Yijun Liu, Phoenix, AZ (US);
Yasuyoshi Hyodo, Tokyo, JP;
Nobuo Matsuki, Tokyo, JP;
Masashi Yamaguchi, Tokyo, JP;
Atsuki Fukazawa, Tokyo, JP;
Naoki Ohara, Tokyo, JP;
Yijun Liu, Phoenix, AZ (US);
ASM Japan K.K., Tokyo, JP;
Abstract
A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.