The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Oct. 20, 2006
Akinori Kitamura, Nirasaki, JP;
Masanobu Honda, Nirasaki, JP;
Nozomi Hirai, Nirasaki, JP;
Masahiro Nakamura, Tokyo, JP;
Tatsuya Sugimoto, Tokyo, JP;
Akinori Kitamura, Nirasaki, JP;
Masanobu Honda, Nirasaki, JP;
Nozomi Hirai, Nirasaki, JP;
Masahiro Nakamura, Tokyo, JP;
Tatsuya Sugimoto, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Zeon Corporation, Tokyo, JP;
Abstract
Photoresist film is used as a mask, plasma etching of a SiOfilm is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. CFO gas and CFO gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.