The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Feb. 18, 2008
Chen-hua Yu, Hsin-Chu, TW;
Ming Han Lee, Taipei, TW;
Ming-shih Yeh, Chupei, TW;
Taiwan Semicondcutor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an interconnect structure of an integrated circuit includes providing a semiconductor substrate; forming a dielectric layer over the semiconductor substrate; forming an opening in the dielectric layer; and forming a copper alloy seed layer in the opening. The copper alloy seed layer physically contacts the dielectric layer. The copper alloy seed layer includes copper and an alloying material. The method further includes filling a metallic material in the opening and over the copper alloy seed layer; performing a planarization to remove excess metallic material over the dielectric layer; and performing a thermal anneal to cause the alloying material in the copper alloy seed layer to be segregated from copper.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile