The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
May. 17, 2002
Kevin L. Beaman, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
Kevin L. Beaman, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes a method of forming a programmable memory device. A tunnel oxide is formed to be supported by a semiconductor substrate. A stack is formed over the tunnel oxide. The stack comprises a floating gate, dielectric mass and control gate. The stack has a top, and has opposing sidewalls extending downwardly from the top. The dielectric mass includes silicon nitride. Silicon nitride spacers are formed along sidewalls of the stack, and a silicon nitride cap is formed over a top of the stack. The silicon nitride within the dielectric mass, cap and/or sidewall spacers is formed from trichlorosilane and ammonia.