The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Sep. 22, 2006
Hsu-sheng Yu, Hsinchu, TW;
Shing-ann Lo, Hsinchu, TW;
Ta-hung Yang, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile