The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Apr. 10, 2007
Edwin A. Arevalo, Haverhill, MA (US);
Christopher R. Hatem, Cambridge, MA (US);
Anthony Renau, West Newbury, MA (US);
Jonathan Gerald England, Horsham, GB;
Edwin A. Arevalo, Haverhill, MA (US);
Christopher R. Hatem, Cambridge, MA (US);
Anthony Renau, West Newbury, MA (US);
Jonathan Gerald England, Horsham, GB;
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (GeH), germanium nitride (GeN), germanium-fluorine compounds (GF, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.