The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2009

Filed:

Jan. 12, 2007
Applicants:

Cheng-kuo Wen, Hsinchu, TW;

Chien-chao Huang, Hsinchu, TW;

Hao-yu Chen, Kaohsiung, TW;

Fu-liang Yang, Hsinchu, TW;

Hsun-chih Tsao, Hsinchu, TW;

Inventors:

Cheng-Kuo Wen, Hsinchu, TW;

Chien-Chao Huang, Hsinchu, TW;

Hao-Yu Chen, Kaohsiung, TW;

Fu-Liang Yang, Hsinchu, TW;

Hsun-Chih Tsao, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a substrate contact on a silicon-on-insulator (SOI) wafer is provided that can be integrated with a process for fabricating SOI devices without additional processing after wafer dicing. The method is applicable in many of the more advanced packaging technologies, e.g., such as flip chip and die stacking, directly creating a contact to silicon substrate via the front of the diced SOI wafer.


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