The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Dec. 18, 2007
Applicants:
Max Wei, San Jose, CA (US);
Been-jon Woo, Saratoga, CA (US);
Inventors:
Max Wei, San Jose, CA (US);
Been-Jon Woo, Saratoga, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/265 (2006.01); H01L 21/425 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
In general, in one aspect, a method includes forming a spacer layer over a substrate having patterned stacks formed therein and trenches between the patterned stacks. A sacrificial polysilicon layer is deposited over the substrate to fill the trenches. A patterning layer is deposited over the substrate and patterned to define contact regions over at least a portion of the trenches. The sacrificial polysilicon layer is etched using the patterned patterning layer to form open regions.