The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Sep. 19, 2006
Chen-hua Yu, Hsin-Chu, TW;
Hung Chun Tsai, Hsinchu, TW;
Hui-lin Chang, Hsin-Chu, TW;
Ting-yu Shen, JiJi Town, TW;
Yung-cheng LU, Taipei, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Hung Chun Tsai, Hsinchu, TW;
Hui-Lin Chang, Hsin-Chu, TW;
Ting-Yu Shen, JiJi Town, TW;
Yung-Cheng Lu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment to modulate a stress of the stressed layer. The post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof.