The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Dec. 23, 2005
Kevin P. O'brien, Portland, OR (US);
Chin-chang Cheng, Portland, OR (US);
Ramanan V. Chebiam, Hillsboro, OR (US);
Valery M. Dubin, Portland, OR (US);
Sridhar Balakrishnan, Portland, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Chin-Chang Cheng, Portland, OR (US);
Ramanan V. Chebiam, Hillsboro, OR (US);
Valery M. Dubin, Portland, OR (US);
Sridhar Balakrishnan, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.