The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jun. 12, 2006
Applicants:
Kenji Matsumoto, Nirasaki, JP;
Masayuki Nasu, Nirasaki, JP;
Tomoyuki Sakoda, Nirasaki, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01); H01L 21/8242 (2006.01); H01L 21/8246 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes the steps of forming a PbTiOx film having a predominantly (111) orientation on a lower electrode as a nucleation layer by an MOCVD process with a film thickness exceeding 2 nm, and forming a PZT film having a predominantly (111) orientation on the nucleation layer, wherein the step of forming the PbTiOx film is conducted under an oxygen partial pressure of less than 340 Pa.