The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7612451 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 03, 2009

Filed:

Jul. 13, 2006
Applicants:

Chih-chao Shih, Hsinchu, TW;

Cheng-lin Huang, Hsinchu, TW;

Ching-hua Hsieh, Hsinchu, TW;

Shau-lin Shue, Hsinchu, TW;

Inventors:

Chih-Chao Shih, Hsinchu, TW;

Cheng-Lin Huang, Hsinchu, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Shau-Lin Shue, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier layer in the opening and in physical contact with the dielectric layer, a conductive material filling the remaining part of the opening, and an interlayer between and adjoining the metallic barrier layer and the conductive material. The interlayer is preferably a metal compound layer.


Find Patent Forward Citations

Shih, Chih-Chao. (2009). Reducing resistivity in interconnect structures by forming an inter-layer (U.S. Patent No. 7612451). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7612451

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