The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Apr. 20, 2004
Kazuhide Hasebe, Tokyo-To, JP;
Mitsuhiro Okada, Tokyo-To, JP;
Takashi Chiba, Tokyo-To, JP;
Jun Ogawa, Tokyo-To, JP;
Kazuhide Hasebe, Tokyo-To, JP;
Mitsuhiro Okada, Tokyo-To, JP;
Takashi Chiba, Tokyo-To, JP;
Jun Ogawa, Tokyo-To, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vesselthat can be evacuated uses a mixed gas containing HF gas and NHgas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NHgas.