The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Apr. 29, 2008
Shu-tine Yang, Jhubei, TW;
Chen-hua Yu, Hsin-Chu, TW;
Chu-yun Fu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a multi-layer shallow trench isolation structure in a semiconductor device is described. In one embodiment, the method includes etching a shallow trench in a silicon substrate of a semiconductor device and forming a dielectric liner layer on a floor and walls of the shallow trench. The method further includes forming a first doped oxide layer in the shallow trench, the first layer formed by vapor deposition of precursors including a source of silicon, a source of oxygen, and sources of doping materials at a first processing condition and forming a second doped oxide layer above the first doped oxide layer by vapor deposition using precursors of silicon and doping materials, at a second processing condition, different from the first processing condition.