The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2009

Filed:

Mar. 30, 2006
Applicants:

Arthur M Howald, Pleasanton, CA (US);

Andras Kuthi, Thousand Oaks, CA (US);

Andrew D. Bailey, Iii, Pleasanton, CA (US);

Butch Berney, Pleasanton, CA (US);

Inventors:

Arthur M Howald, Pleasanton, CA (US);

Andras Kuthi, Thousand Oaks, CA (US);

Andrew D. Bailey, III, Pleasanton, CA (US);

Butch Berney, Pleasanton, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Published as:
US2003205327A1; AU2003228799A1; AU2003228799A8; WO03096765A2; WO03096765A3; TW200401363A; KR20050012736A; EP1509942A2; CN1653580A; JP2005524961A; US7086347B2; TWI273653B; CN100447935C; US7611640B1; KR100993161B1; JP4597661B2; EP1509942B1;

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