The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Apr. 26, 2004
Koichi Kanaya, Nishishirakawa-gun, JP;
Toru Otsuka, Nishishirakawa-gun, JP;
Takao Kanno, Nishishirakawa-gun, JP;
Koichi Kanaya, Nishishirakawa-gun, JP;
Toru Otsuka, Nishishirakawa-gun, JP;
Takao Kanno, Nishishirakawa-gun, JP;
Shin-Etsu Handotai Co., Ltd, Tokyo, JP;
Abstract
In a vapor phase growth apparatus for performing a vapor phase growth of a silicon epitaxial layer on a main surface of a silicon single crystal substrate while heating the silicon single crystal substrate placed on a pocket formed on a susceptor, from both sides, the pocket has an outer peripheral side part which supports a rear surface of the silicon single crystal substrate and an inner peripheral side part which is kept in a state of being more recessed than the outer peripheral side part in the inside of the outer peripheral side part, and the susceptor has a warped inverted U-shaped longitudinal sectional shape.