The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Apr. 23, 2001
Toru Taniguchi, Tokyo, JP;
Etsuro Morita, Tokyo, JP;
Satoshi Matagawa, Tokyo, JP;
Seiji Harada, Tokyo, JP;
Isoroku Ono, Tokyo, JP;
Mitsuhiro Endo, Tokyo, JP;
Fumihiko Yoshida, Tokyo, JP;
Toru Taniguchi, Tokyo, JP;
Etsuro Morita, Tokyo, JP;
Satoshi Matagawa, Tokyo, JP;
Seiji Harada, Tokyo, JP;
Isoroku Ono, Tokyo, JP;
Mitsuhiro Endo, Tokyo, JP;
Fumihiko Yoshida, Tokyo, JP;
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a semiconductor wafer sink rate different in polishing from that of the other abrasive cloth for one of a polishing cloth () on an upper surface plate () and a polishing cloth () on a lower surface plate () so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer (W), or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.