The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Jun. 14, 2004
John Kouvetakis, Mesa, AZ (US);
Matthew Bauer, Hillsboro, OR (US);
Jose Menendez, Tempe, AZ (US);
Chang Wu HU, Gilbert, AZ (US);
Ignatius S. T. Tsong, Tempe, AZ (US);
John Tolle, Gilbert, AZ (US);
John Kouvetakis, Mesa, AZ (US);
Matthew Bauer, Hillsboro, OR (US);
Jose Menendez, Tempe, AZ (US);
Chang Wu Hu, Gilbert, AZ (US);
Ignatius S. T. Tsong, Tempe, AZ (US);
John Tolle, Gilbert, AZ (US);
Abstract
A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.