Company Filing History:
Years Active: 2009
Title: Chang Wu Hu: Innovator in GeSn Alloys
Introduction
Chang Wu Hu is a prominent inventor based in Gilbert, AZ (US). He has made significant contributions to the field of materials science, particularly in the development of GeSn alloys with tunable bandgaps. His innovative work has implications for various applications in electronics and optoelectronics.
Latest Patents
Chang Wu Hu holds a patent for "GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon." This patent describes a method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber. The process involves introducing a gaseous precursor comprising SnD4 under specific conditions to form the epitaxial layer. The gaseous precursor includes SnD4 and high purity H2 in a volume of about 15-20%. The introduction occurs at temperatures ranging from about 250°C to about 350°C. This method enables the growth of device-quality Sn—Ge materials with tunable bandgaps directly on silicon substrates.
Career Highlights
Chang Wu Hu is affiliated with Arizona State University, where he continues to advance research in semiconductor materials. His work has garnered attention for its potential to enhance the performance of electronic devices.
Collaborations
He has collaborated with notable colleagues, including John Kouvetakis and Matthew Bauer, contributing to the advancement of research in his field.
Conclusion
Chang Wu Hu's innovative work in GeSn alloys represents a significant advancement in materials science, with the potential to impact various technological applications. His contributions continue to shape the future of semiconductor research.