The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Nov. 27, 2006
Yasuyoshi Hyodo, Tama, JP;
Kazuo Kohmura, Sodegaura, JP;
Nobutoshi Fujii, Chigasaki, JP;
Nobutaka Kunimi, Osaka, JP;
Keizo Kinoshita, Tokyo, JP;
Yasuyoshi Hyodo, Tama, JP;
Kazuo Kohmura, Sodegaura, JP;
Nobutoshi Fujii, Chigasaki, JP;
Nobutaka Kunimi, Osaka, JP;
Keizo Kinoshita, Tokyo, JP;
Abstract
A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.