The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Apr. 06, 2005
Applicants:
Hsiao-tzu LU, Hsin-chu, TW;
Chin-hsiang Lin, Hsin-chu, TW;
Hua-shu Wu, Hsin-chu, TW;
Chia-hsiang Lin, Hsin-Chu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Inventors:
Hsiao-Tzu Lu, Hsin-chu, TW;
Chin-Hsiang Lin, Hsin-chu, TW;
Hua-Shu Wu, Hsin-chu, TW;
Chia-Hsiang Lin, Hsin-Chu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for semiconductor manufacturing includes forming an overlay target having a pattern formed by a first mask layer and an adjacent layer. The overlay target is exposed to radiation. As a result, reflective beams can be detected from the pattern and the adjacent layer and the location of the pattern can be identified based on the reflective beams.