The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Apr. 26, 2000
Zhiping Yin, Boise, ID (US);
Ravi Iyer, Boise, ID (US);
Thomas R. Glass, Idaho City, ID (US);
Richard Holscher, Boise, ID (US);
Ardavan Niroomand, Boise, ID (US);
Linda K. Somerville, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Zhiping Yin, Boise, ID (US);
Ravi Iyer, Boise, ID (US);
Thomas R. Glass, Idaho City, ID (US);
Richard Holscher, Boise, ID (US);
Ardavan Niroomand, Boise, ID (US);
Linda K. Somerville, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The present invention includes semiconductor circuitry. Such circuitry encompasses a metal silicide layer over a substrate and a layer comprising silicon, nitrogen and oxygen in physical contact with the metal silicide layer. The present invention also includes a gate stack which encompasses a polysilicon layer over a substrate, a metal silicide layer over the polysilicon layer, an antireflective material layer over the metal silicide layer, a silicon nitride layer over the antireflective material layer, and a layer of photoresist over the silicon nitride layer, for photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist and transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer. The patterned silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer encompass a gate stack.