The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Jan. 09, 2006
Applicants:

You Wang, Cupertino, CA (US);

Zhihong Wang, Santa Clara, CA (US);

Renhe Jia, Berkeley, CA (US);

Stan D. Tsai, Fremont, CA (US);

Yongqi HU, San Jose, CA (US);

Inventors:

You Wang, Cupertino, CA (US);

Zhihong Wang, Santa Clara, CA (US);

Renhe Jia, Berkeley, CA (US);

Stan D. Tsai, Fremont, CA (US);

Yongqi Hu, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.


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