The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Apr. 27, 2007
Method of correcting opaque defect of photomask using atomic force microscope fine processing device
Toshio Doi, Chiba, JP;
Kazutoshi Watanabe, Chiba, JP;
Osamu Takaoka, Chiba, JP;
Atsushi Uemoto, Chiba, JP;
Toshio Doi, Chiba, JP;
Kazutoshi Watanabe, Chiba, JP;
Osamu Takaoka, Chiba, JP;
Atsushi Uemoto, Chiba, JP;
SII NanoTechnology Inc., Chiba, JP;
Abstract
An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.