The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Mar. 28, 2007
Joerg Bischoff, Illmenau, DE;
David Hetzer, Dresden, DE;
Manuel Madriaga, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
To control a photolithography cluster using optical metrology, a structure is fabricated on a wafer using the photolithography cluster. A measured diffraction signal off the structure is obtained. The measured diffraction signal is compared to a simulated diffraction signal. The simulated diffraction signal is associated with one or more values of one or more photoresist parameters. The one or more photoresist parameters characterize behavior of photoresist when the photoresist undergoes processing steps in the photolithography cluster. The simulated diffraction signal was generated using one or more values of one or more profile parameters. The one or more values of the one or more profile parameters used to generate the simulated diffraction signal were derived from the one or more values of the one or more photoresist parameters associated with the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match, then one or more values of one or more photoresist parameters used in the photolithography cluster are determined to be the one or more values of the one or more photoresist parameters associated with the matching simulated diffraction signal. One or more process parameters or equipment settings of the photolithography cluster are adjusted based on the one or more values of the one or more photoresist parameters.