The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Feb. 24, 2006
Ming Ling Yeh, Tainan, TW;
Chen-hua Yu, Hsin-Chu, TW;
Keng-chu Lin, Ping-Tung, TW;
Tien-i Bao, Hsin-Chu, TW;
Shwang-ming Cheng, Hsin-Chu, TW;
Ming Ling Yeh, Tainan, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Tien-I Bao, Hsin-Chu, TW;
Shwang-Ming Cheng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure having an opening formed in a porous dielectric layer is provided. The exposed pores of the dielectric layer along the sidewalls of the opening are sealed. The sealing may comprise a selective or a non-selective deposition method. The sealing layer has a substantially uniform thickness in one portion of the opening and a non-uniform thickness in another portion of the opening. A damascene interconnect structure having a pore sealing layer is provided as is its method of manufacture.