The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Apr. 27, 2005
Chih-hao Wang, Hsin-Chu, TW;
Ta-wei Wang, Taipei, TW;
Shang-chih Chen, Jiadong Township, TW;
Ching-wei Tsai, Taoyuan, TW;
Chih-Hao Wang, Hsin-Chu, TW;
Ta-Wei Wang, Taipei, TW;
Shang-Chih Chen, Jiadong Township, TW;
Ching-Wei Tsai, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A MOSFET having a nitrided gate dielectric and its manufacture are disclosed. The method comprises providing a substrate and depositing a non-high-k dielectric material on the substrate. The non-high-k dielectric comprises two layers. The first layer adjacent the substrate is essentially nitrogen-free, and the second layer includes between about 10atoms/cmto about 10atoms/cmnitrogen. The MOSFET further includes a high-k dielectric material on the nitrided, non-high-k dielectric. The high-k dielectric preferably includes HfSiON, ZrSiON, or nitrided AlO. Embodiments further include asymmetric manufacturing techniques wherein core and peripheral integrated circuit areas are separately optimized.